N CHANNEL MOS TYPE (FM TUNER, VHF AND FR AMPLIFIER APPLICATIONS)

FM Tuner, VHF and RF Amplifier Applications Low reverse transfer capacitance: Crss = 0.035 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: GPS = 28dB (typ.) Recommend operation voltage: 5~15 V

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TOSHIBA

东芝

TRANSISTOR

3SK121 datasheet pdf

文件：73.84 Kbytes 页数：1 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

FM Tuner, VHF and RF Amplifier Applications
 Low reverse transfer capacitance: Crss = 0.035 pF (typ.)
 Low noise figure: NF = 1.7dB (typ.)
 High power gain: GPS = 28dB (typ.)
 Recommend operation voltage: 5~15 V

文件：198.26 Kbytes 页数：7 Pages

TOSHIBA

东芝

Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF and RF Amplifier Applications

Toshiba

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

FM Tuner, VHF and RF Amplifier Applications
 Low reverse transfer capacitance: Crss = 0.035 pF (typ.)
 Low noise figure: NF = 1.7dB (typ.)
 High power gain: GPS = 28dB (typ.)
 Recommend operation voltage: 5~15 V

文件：198.26 Kbytes 页数：7 Pages

TOSHIBA

东芝

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2410 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. EATURES • Low On-Resistance RDS(on)1 = 40 mW MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 mW MAX. (@ VGS = 4 V, ID = 15 A)

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RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.29 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. FEATURES • Low On-Resistance RDS(on)1 = 40 mW MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 mW MAX. (@ VGS = 4 V, ID = 15 A)

文件：220.61 Kbytes 页数：10 Pages

RENESAS

瑞萨