SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2410 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. EATURES • Low On-Resistance RDS(on)1 = 40 mW MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 mW MAX. (@ VGS = 4 V, ID = 15 A)

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RENESAS

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

isc N-Channel MOSFET Transistor

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ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION\nThe 2SK2410 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.FEATURES\n• Low On-Resistance\nRDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A)\nRDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A)\n• Low Ciss Ciss = 1500 pF TYP.\n• High Avalanche Capability • Low On-Resistance\nRDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A)\nRDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A)\n• Low Ciss Ciss = 1500 pF TYP.\n• High Avalanche Capability Ratings\n• Built-in G-S Gate Protection Diodes;

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