isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：284.84 Kbytes 页数：2 Pages

ISC

无锡固电

High-Frequency, Low-Noise Amp Applications????????????

Low-Frequency, Low Noise Amplifier Applications Features · Ultralow noise figure. · Large |yfs| · Low gate leakage current.

文件：74.11 Kbytes 页数：3 Pages

SANYO

三洋

Silicon N-Channel MOS FET

Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement–mode • Good complementary characteristics • Equipp

文件：39.84 Kbytes 页数：7 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Application Low frequency power amplifier Complementary pair

文件：72.02 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Application Low frequency power amplifier Complementary pair

文件：72.02 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Application Low frequency power amplifier Complementary pair

文件：72.02 Kbytes 页数：6 Pages

RENESAS

瑞萨

Old Company Name in Catalogs and Other Documents

Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Application Low frequency power amplifier Complementary pair

文件：91.11 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement–mode • Good complementary characteristics • Equipp

文件：39.84 Kbytes 页数：7 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Application Low frequency power amplifier Complementary pair

文件：72.02 Kbytes 页数：6 Pages

RENESAS

瑞萨

N-channel MOS-FET

FAP-IIA Series > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Pow

文件：174.31 Kbytes 页数：2 Pages

Fuji

富士通