Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter, motor control Application High speed power switching

文件：924.61 Kbytes 页数：7 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.76Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.41 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.76Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.25 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

文件：205.7 Kbytes 页数：2 Pages

Fuji

富士通

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

文件：205.7 Kbytes 页数：2 Pages

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.26 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.1 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel MOS FET

Features • High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, hD = 55 typ (f = 860 MHz) • Compact package Suitable for push - pull circuit Application UHF power amplifier

文件：47.52 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

High-Frequency Low-Noise Amp Applications??????????

High-Frequency Low-Noise Amplifier Applications Features · Adoption of FBET process. · Amateur radio equipment. · UHF amplifiers, MIX, OSC, analog switches. · Large | yfs|. · Small Ciss.

文件：130.36 Kbytes 页数：5 Pages

SANYO

三洋

Capacitor Microphone Applications?

Capacitor Microphone Applications Features • Ultrasmall-sized package permitting 2SK2219- •pplied sets to be made small and slim. • Especially suited for use in audio, telephone capacitor microphones. • Excellent voltage characteristic. • Excellent transient characteristic. • Adoption of FBE

文件：97.73 Kbytes 页数：4 Pages

SANYO

三洋