isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.65 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.6 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter Application High speed power switching

文件：29.57 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for switching regulator, DC-DC converter

文件：993.76 Kbytes 页数：9 Pages

RENESAS

瑞萨

N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)

Audio Frequency Low Noise Amplifier Applications • Including two devices in SM5 (super mini type with 5 leads.) • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS= 10 V, VGS= 0 • High breakdown voltage: VGDS= −50 V • Low noise: NF = 1.0dB (typ.) at VDS= 10

文件：208.17 Kbytes 页数：3 Pages

TOSHIBA

东芝

Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • Including two devices in SM5 (super mini type with 5 leads.) • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS= 10 V, VGS= 0 • High breakdown voltage: VGDS= −50 V • Low noise: NF = 1.0dB (typ.) at VDS= 10

文件：308.08 Kbytes 页数：5 Pages

TOSHIBA

东芝

Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • Including two devices in SM5 (super mini type with 5 leads.) • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS= 10 V, VGS= 0 • High breakdown voltage: VGDS= −50 V • Low noise: NF = 1.0dB (typ.) at VDS= 10

文件：308.08 Kbytes 页数：5 Pages

TOSHIBA

东芝

Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • Including two devices in SM5 (super mini type with 5 leads.) • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS= 10 V, VGS= 0 • High breakdown voltage: VGDS= −50 V • Low noise: NF = 1.0dB (typ.) at VDS= 10

文件：308.08 Kbytes 页数：5 Pages

TOSHIBA

东芝

Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • Including two devices in SM5 (super mini type with 5 leads.) • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS= 10 V, VGS= 0 • High breakdown voltage: VGDS= −50 V • Low noise: NF = 1.0dB (typ.) at VDS= 10

文件：308.08 Kbytes 页数：5 Pages

TOSHIBA

东芝

N-CHANNEL SILICON POWER MOS-FET

文件：177.69 Kbytes 页数：4 Pages

FUJI

富士通