Silicon N-Channel MOS FET

Features • Suitable for direct mounting • High forward transfer admittance • Excellent frequency response • Enhancement-mode Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79

文件：33.8 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET

Features • Suitable for direct mounting • High forward transfer admittance • Excellent frequency response • Enhancement-mode Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79

文件：65.36 Kbytes 页数：6 Pages

RENESAS

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Power MOSFETs-MOSFETs for amplifier

Renesas

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.28 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

文件：253.07 Kbytes 页数：10 Pages

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

文件：253.07 Kbytes 页数：10 Pages

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.61 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 6A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.1Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.11 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2141 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-state Resistance RDS(on) = 1.1 W MAX. (VGS = 10 V, ID = 3.0 A) • LOW Ciss Ciss = 1150 pF TYP. •

文件：243.36 Kbytes 页数：10 Pages

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：99.22 Kbytes 页数：8 Pages

NEC

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