N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

文件：171.32 Kbytes 页数：2 Pages

Fuji

富士通

N-channel MOS-FET High Speed Switching

- High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

文件：182.14 Kbytes 页数：2 Pages

Fuji

富士通

丝印：T100；Package：MPT3；Small switching (30V, 2A)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel.

文件：127.68 Kbytes 页数：4 Pages

ROHM

罗姆

Small switching (30V, 2A)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel.

文件：127.68 Kbytes 页数：4 Pages

ROHM

罗姆

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.115Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.54 Kbytes 页数：2 Pages

ISC

无锡固电

Fast Switching Speed

DESCRIPTION • Drain Current –ID= 6A@ TC=25℃ • Drain Source Voltage- : VDSS= 250V(Min) • Fast Switching Speed APPLICATIONS • Switching regulators

文件：60.21 Kbytes 页数：2 Pages

ISC

无锡固电

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive. • Micaless package facilitating mounting.

文件：80.82 Kbytes 页数：3 Pages

SANYO

三洋

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2109 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the

文件：58.67 Kbytes 页数：6 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2109 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for drivin

文件：261.32 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS Field Effect Transistor

Features ● Low on-resistance RDS(on)=1.0 Ω MAX.@VGS=4.0V,ID=0.3A ● High switching speed

文件：46.38 Kbytes 页数：1 Pages

KEXIN

科信电子