N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

文件：157 Kbytes 页数：2 Pages

Fuji

富士通

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

文件：154.52 Kbytes 页数：2 Pages

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.07Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.84 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel MOS-FET

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance - Avalanche Proof - Including G-S Zener-Diode > Applications - Motor Control - General Purpose Power Amplifier - DC-DC Converters

文件：185 Kbytes 页数：2 Pages

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 50A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 17mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.15 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET?

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：139.93 Kbytes 页数：4 Pages

Fuji

富士通

丝印：B1；Package：SC-75；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SK1824 is a N-channel vertical type MOS FET that is driven at 2.5 V. Because this MOS FET can be driven on a low voltage and because it is not necessary to consider the drive current, the 2SK1824 is ideal for driving the actuator of power-s

文件：891.34 Kbytes 页数：7 Pages

RENESAS

瑞萨

N-CHANNEL MOS FET FOR SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：63.3 Kbytes 页数：6 Pages

NEC

瑞萨

N-Channel 30-V(D-S) MOSFET

Features 1) Lowon-resistance. 2) Fast switching speed. 3)Lowvoltage drive (2.5V) makes this device idealfor portable equipment. 4) Drive circuits can be simple. 5) Paralel use is easy. B)ESD protected 2KV HBM Applications Interfacing, switching (30V, 100mA)

文件：1.6907 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)

High Speed Switching Applications Analog Switch Applications • 4 V gate drive • Low threshold voltage: Vth= 0.8~2.5 V • High speed • Enhancement-mode • Small package

文件：198.28 Kbytes 页数：4 Pages

TOSHIBA

东芝