Silicon N-Channel Power F-MOS FET

Silicon N-Channel Power F-MOS FET ■Features ●High avalanche energy capacity ●VGSS: 30V guaranteed ●Low RDS(on), high-speed switching characteristic ■Applications ●High-speed switching (switching power supply, AC adaptor) ●For high-frequency power amplification

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PANASONIC

松下

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：316.75 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel Power F-MOS FET

Silicon N-Channel Power F-MOS FET■ ●High avalanche energy capacity\n●VGSS: 30V guaranteed\n●Low RDS(on), high-speed switching characteristic■Applications\n●High-speed switching (switching power supply, AC adaptor)\n●For high-frequency power amplification;

Panasonic

松下