Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：30.04 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Power MOSFET

文件：1.07659 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Silicon N-Channel MOS FET

HITACHI

日立

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.06 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：30.04 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：30.04 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.91 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

文件：299.61 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：299.07 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：1.0766 Mbytes 页数：9 Pages

VBSEMI

微碧半导体