Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：30.03 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：94.91 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

•  Low on-resistance\n•  High speed switching\n•  Low drive current\n•  No secondary breakdown\n•  Suitable for switching regulator and DC-DC converterApplication\nHigh speed power switching;

HITACHI

日立

Silicon N-Channel MOS FET

•  Low on-resistance\n•  High speed switching\n•  Low drive current\n•  No secondary breakdown\n•  Suitable for switching regulator and DC-DC converterApplication\nHigh speed power switching;

Renesas

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 7Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.41 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：30.03 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：94.91 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：94.91 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

文件：94.91 Kbytes 页数：8 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 7Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.27 Kbytes 页数：2 Pages

ISC

无锡固电