首页 >2SJ505S-VB>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconPChannelMOSFET | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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