| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Silicon P Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching 文件：47.36 Kbytes 页数：10 Pages | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
Silicon P Channel DV-L MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching 文件：83.03 Kbytes 页数：7 Pages | RENESAS 瑞萨 | RENESAS | ||
Silicon P Channel DV-L MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching 文件：83.03 Kbytes 页数：7 Pages | RENESAS 瑞萨 | RENESAS | ||
Power MOSFET Features High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Applications Switching regulators DC-DC converters General purpose power amplifier 文件：332.99 Kbytes 页数：12 Pages | Fuji 富士通 | Fuji | ||
Power MOSFET Features High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Applications Switching regulators DC-DC converters General purpose power amplifier 文件：341.28 Kbytes 页数：12 Pages | Fuji 富士通 | Fuji | ||
Power MOSFET Features High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Applications Switching regulators DC-DC converters General purpose power amplifier 文件：339.71 Kbytes 页数：12 Pages | Fuji 富士通 | Fuji | ||
FAP-III Series Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High forward Transconductance ● Avalanche-proof Applications ● Switching regulators ● DC-DC converters ● General purpose power amplifier 文件：298.25 Kbytes 页数：2 Pages | Fuji 富士通 | Fuji | ||
Power MOSFET Features High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Applications Switching regulators DC-DC converters General purpose power 文件：348.29 Kbytes 页数：12 Pages | Fuji 富士通 | Fuji | ||
Power MOSFET Features High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Applications Switching regulators DC-DC converters General purpose power 文件：388.87 Kbytes 页数：12 Pages | Fuji 富士通 | Fuji | ||
Silicon P Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching 文件：38.52 Kbytes 页数：7 Pages | HitachiHitachi Semiconductor 日立日立公司 | Hitachi |
技术参数
- 封装类型：
LDPAK(L)/TO-262
- Nch/Pch：
Pch
- 通道数：
Single
- VDSS (V) 最大值：
-30
- ID (A)：
-30
- RDS (ON)(mΩ) 最大值@4V或4.5V：
60
- RDS (ON)(mΩ) 最大值@10V或8V：
35
- Ciss (pF) 典型值：
1700
- Vgs (off) (V) 最大值：
-2
- VGSS (V)：
20
- Pch (W)：
50
- 应用：
Industrial
- 安装类型：
Through Hole
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
26+ |
TO-252 |
360000 |
进口原装现货 |
询价 | ||
恩XP |
23+ |
SOD-323 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
RENESAS |
21+ |
TO-252 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
RENESAS |
2023+ |
TO-252 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
RENESAS |
24+ |
TO-252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
RENESAS |
23+ |
TO-252 |
50 |
全新原装正品现货,支持订货 |
询价 | ||
RENESAS |
25+ |
TO-252 |
8800 |
公司只做原装,详情请咨询 |
询价 | ||
RENESAS |
24+ |
TO-252 |
16900 |
原装正品现货支持实单 |
询价 | ||
RENESAS |
2511 |
TO-252 |
50 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 |
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