Silicon P-Channel MOS FET

Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power sw

文件：42.9 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

日立日立公司

SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

FEATURES ● Low On-Resistance ● High Speed Switching ● Low Drive Current ● 4 V Gate Drive Device - Can be driven from 5 V source ● Suitable for Motor Drive, DC-DC Converter, Power Swich and Solenoid Drive

文件：579.19 Kbytes 页数：4 Pages

HITACHIHitachi Semiconductor

日立日立公司

SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

FEATURES ● Low On-Resistance ● High Speed Switching ● Low Drive Current ● 4 V Gate Drive Device - Can be driven from 5 V source ● Suitable for Motor Drive, DC-DC Converter, Power Swich and Solenoid Drive

文件：148.13 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

文件：571.52 Kbytes 页数：4 Pages

HITACHIHitachi Semiconductor

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Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：29.83 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

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isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -10A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= -10V APPLICATIONS · High Speed Power Switching

文件：296.31 Kbytes 页数：2 Pages

ISC

无锡固电

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -15A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.11Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：297 Kbytes 页数：2 Pages

ISC

无锡固电

SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

文件：271.56 Kbytes 页数：2 Pages

HITACHIHitachi Semiconductor

日立日立公司

SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

文件：268.87 Kbytes 页数：2 Pages

HITACHIHitachi Semiconductor

日立日立公司

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -20A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.085Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.42 Kbytes 页数：2 Pages

ISC

无锡固电