2SD880-Q

NPN Silicon Power Transistors

Features •WithTO-220package •Poweramplifierapplications •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0

2SD880-Q-BP

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 3A TO220AB

2SD880

NPNEPITAXIALTRANSISTOR

2SD880

NPNSiliconEpitaxialPowerTransistor

FEATURES: *Lowfrequencypoweramplifier *Complementto2SB834

2SD880

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Complementtotype2SB834 ·Lowcollectorsaturationvoltage APPLICATIONS ·Designedforuseinaudiofrequency poweramplifierapplications

2SD880

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Cpackage •Complementtotype2SB834 •Lowcollectorsaturationvoltage APPLICATIONS •Designedforuseinaudiofrequencypoweramplifierapplications

2SD880

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforlowfrequencypoweramplifierapplications.

2SD880

Plastic-EncapsulatedTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1.5W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SD880

NPNEPITAXIALTRANSISTOR

DESCRIPTION TheUTC2SD880isdesignedforaudiofrequencypoweramplifierapplications. FEATURES *HighDCCurrentGain:hFE=200(Max.)(VCE=5V,IC=0.5A) *LowSaturationVoltage:VCE(SAT)=1.0V(Max.)(IC=3A,IB=0.3A) *HighPowerDissipation:PC=30W(TA=25°C) *Complementaryto2SB834

2SD880

NPNEPITAXIALSILICONTRANSISTOR(LOWFREQUENCYPOWERAMPLIFIER)

Complementto2SB834