Silicon NPN epitaxial planer type(For low-frequency output amplification)

Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB621 and 2SB621A ■ Features ● Large collector power dissipation PC. ● Low collector to emitter saturation voltage VCE(sat).

文件：46.27 Kbytes 页数：3 Pages

PANASONIC

松下

Medium Power Amplifiers and Switches

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

文件：41.27 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON TRANSISTOR

文件：89.07 Kbytes 页数：1 Pages

MICRO-ELECTRONICS

Medium Power Amplifiers and Switches

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

文件：41.27 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN epitaxial planer type(For low-frequency output amplification)

Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB621 and 2SB621A ■ Features ● Large collector power dissipation PC. ● Low collector to emitter saturation voltage VCE(sat).

文件：46.27 Kbytes 页数：3 Pages

PANASONIC

松下

For Low-Frequency Output Amplification

Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat)

文件：78.17 Kbytes 页数：4 Pages

PANASONIC

松下

SILICON TRANSISTOR

文件：89.07 Kbytes 页数：1 Pages

MICRO-ELECTRONICS

丝印：DV1/DV2/DV3/DV4/DV5；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● Micro package ● Complementary to 2SB624 PNP Transistor ● High DC current gain hFE:200TYP.(VCE=1.0V,IC=100mA) APPLICATIONS ● Audio frequency general purpose amplifier applications

文件：1.12583 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

SOT-23 Plastic-Encapsulate Transistors

FEATURES High DC Current gain. Complimentary to 2SB624

文件：1.66317 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：DV*；Package：SOT-23；TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.7 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：142.24 Kbytes 页数：1 Pages

WINNERJOIN

永而佳