零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
Silicon NPN Epitaxial •Lowfrequencypoweramplifier •Complementarypairwith2SB561 | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon NPN Epitaxial •Lowfrequencypoweramplifier •Complementarypairwith2SB561 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon NPN Epitaxial •Lowfrequencypoweramplifier •Complementarypairwith2SB561 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon NPN Epitaxial •Lowfrequencypoweramplifier •Complementarypairwith2SB561 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon NPN Epitaxial 1.Lowfrequencypoweramplifier 2.Complementarypairwith2SB562 | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon NPN Epitaxial •Lowfrequencypoweramplifier •Complementarypairwith2SB562 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
LOW FREQUENCY POWER AMPLIFIER LOWFREQUENCYPOWERAMPLIFIER FEATURES *Lowfrequencypoweramplifier *Complementto2SB562 | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
NPN Epitaxial Silicon Transistor Features •LowFrequencyPowerAmplifier. •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •CaseMaterial:MoldedPlastic.ULFlammability ClassificationRating94V-0andMSLRating1 •Complementarypairwith2SB562 •Halogenfreeavai | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
TRANSISTOR (NPN) FEATURES Powerdissipation PCM:0.9W(Tamb=25℃) Collectorcurrent ICM:1A Collector-basevoltage V(BR)CBO:25V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
Silicon NPN transistor in a TO-92LM Plastic Package Descriptions SiliconNPNtransistorinaTO-92LMPlasticPackage. Features Complementarypairwith2SB562. Applications Lowfrequencypoweramplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
Silicon NPN Epitaxial •Lowfrequencypoweramplifier •Complementarypairwith2SB562 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon NPN Epitaxial •Lowfrequencypoweramplifier •Complementarypairwith2SB562 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
isc Silicon NPN Darlington Power Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
isc Silicon NPN Darlington Power Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Silicon NPN transistor in a TO-92 Plastic Package | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
LOW FREQUENCY POWER AMPLIFIER | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
NPN Epitaxial Silicon Transistor | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
LOW FREQUENCY POWER AMPLIFIER | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
NPN Epitaxial Silicon Transistor | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
LOW FREQUENCY POWER AMPLIFIER | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-NPN
- 性质:
通用型 (Uni)
- 封装形式:
直插封装
- 极限工作电压:
25V
- 最大电流允许值:
0.7A
- 最大工作频率:
280MHZ
- 引脚数:
3
- 可代换的型号:
BC337,BC338,BC378,BC635,BC637,BC639,BC738,3DK4A,
- 最大耗散功率:
0.5W
- 放大倍数:
- 图片代号:
A-39
- vtest:
25
- htest:
280000000
- atest:
.7
- wtest:
.5
详细参数
- 型号:
2SD46
- 制造商:
Panasonic Industrial Company
- 功能描述:
TRANSISTOR
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA |
2024+ |
TO-92 |
32560 |
原装优势绝对有货 |
询价 | ||
瑞萨 |
2017+ |
TO-92 |
54789 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
NA |
62 |
原装正品现货供应 |
询价 | ||||
HIT |
16+ |
原厂封装 |
2000 |
原装现货假一罚十 |
询价 | ||
HIT |
23+ |
光纤 |
5000 |
原装正品,假一罚十 |
询价 | ||
584 |
询价 | ||||||
HGF |
2022+ |
TO-92 |
5000 |
只做原装公司现货 |
询价 | ||
23+ |
N/A |
12550 |
正品授权货源可靠 |
询价 | |||
HITACHI/日立 |
1926+ |
TO-92 |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
HGF |
2023+ |
TO-92 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 |