丝印：2SD313；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507

文件：1.02553 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：2SD313；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507

文件：1.02553 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A ● DC Current Gain hFE=40~320@IC=1A ● Complementray to PNP 2SB507

文件：605.08 Kbytes 页数：2 Pages

JIANGSU

长电科技

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1.75 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：126.14 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Low Current Low Voltage. Applications Low frequency power amplifier applications.

文件：610.01 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

POWER TRANSISTORS(3A,60V,30W)

3 AMPERE POWER TRANSISTOR 60 VOLT 30 WATTS

文件：115.15 Kbytes 页数：3 Pages

MOSPEC

统懋

NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

LOW FREQUENCY POWER AMPLIFIER Complement to 2SB507

文件：30.57 Kbytes 页数：1 Pages

WINGS

永盛电子

PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE

Planar Rtpe Silicon Transistor For AF POWER Amplifier Use

文件：42.21 Kbytes 页数：1 Pages

SANYO

三洋

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications.

文件：49.01 Kbytes 页数：4 Pages

UTC

友顺

Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.75 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：54.65 Kbytes 页数：1 Pages

TEL

东电电子