2SD2351U3

丝印：BJ；Package：SOT-323；General Purpose Transistor (50V, 150mA)

Features 1)HighDCcurrentgain. 2)Highemitter-basevoltage.(VCBO=12V) 3)Lowsaturationvoltage. (Max.VCE(sat)=300mVatIC/IB=50mA/5mA) Application LOWFREQUENCYAMPLIFIER

2SD2351U3

NPN, SOT-323, 50V 150mA, High hFE Transistor; • High DC current gain.\n• High emitter-base voltage.(VCBO=12V)\n• Low saturation voltage. (Max. VCE(sat)=300mV at IC/ IB=50mA/5mA)\n;

Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

2SD2352

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

TransistorSiliconNPNTripleDiffusedType PowerAmplifierApplications •HighDCcurrentgain:hFE=800to3200 •Lowcollectorsaturationvoltage:VCE(sat)=0.3V(typ.)

2SD2353

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

1.HighDCCurrentGain:hFE=800~3200 2.LowCollectorSaturationVoltage:Vce(sat)=0.4V(Typ.)

2SD2356

TRANSISTORS(SELECTION GUIDE BY APPLICATIONS AND FUNCTIONS)

SiliconPowerTransistorsforTVandMonitorDisplay

2SD2357

Silicon PNP epitaxial planer typeFor low-frequency amplification)

SiliconPNPepitaxialplanertype Forlow-frequencyamplification Complementaryto2SD2357 ■Features ●LowcollectortoemittersaturationvoltageVCE(sat). ●LargecollectorpowerdissipationPC. ●MiniPowertypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroug

2SD2357

Silicon NPN epitaxial planer type(For low-frequency amplification)

SiliconNPNepitaxialplanertype Forlow-frequencyamplification Complementaryto2SB1537 ■Features ●LowcollectortoemittersaturationvoltageVCE(sat). ●LargecollectorpowerdissipationPC. ●MiniPowertypepackage,allowingdownsizingoftheequipment andautomaticinsertionth

2SD2357

Silicon NPN Epitaxial Planar Type

Features ●Lowcollector-emittersaturationvoltageVCE(sat). ●LargecollectorpowerdissipationPC. ●MiniPowertypepackage,allowingdownsizingoftheequipment andautomaticinsertionthroughthetapepackingandthemagazine packing.

2SD2358

Silicon NPN epitaxial planer type(For low-frequency output amplification)

Forlow-frequencyoutputamplification Complementaryto2SB1538 ■Features •LowcollectortoemittersaturationvoltageVCE(sat):0.15V •Allowingsupplywiththeradialtaping

2SD2359

Silicon PNP epitaxial planer type(For low-frequency amplification)

SiliconPNPepitaxialplanertype Forlow-frequencyamplification Complementaryto2SD2359 ■Features ●LowcollectortoemittersaturationvoltageVCE(sat). ●LargecollectorpowerdissipationPC. ●MiniPowertypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroug