丝印：2SD2137；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES High Forward Current Transfer Ratio hFE which Has Satisfactory Linearity Low Collector to Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping

文件：1.025079 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：2SD2137；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES High Forward Current Transfer Ratio hFE which Has Satisfactory Linearity Low Collector to Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping

文件：1.025079 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：D2137A；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES High DC Current Gain Low Collector to Emitter Saturation Voltage VCE(sat) Allowing Automatic Insertion with Radial Taping

文件：1.08001 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification, Complementary to 2SB1417 and 2SB1417A Features 1. High forward current transfer ratio hFEwhich has satisfactory linearity 2. Low collector to emitter saturation voltage VCE(sat) 3. Allowing supply with the r

文件：54.7 Kbytes 页数：3 Pages

Panasonic

松下

Silicon PNP epitaxial planar type(For power amplification)

Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Allowing automatic insertion with radial taping

文件：55.11 Kbytes 页数：3 Pages

Panasonic

松下

Silicon PNP epitaxial planar type(For power amplification)

Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Allowing automatic insertion with radial taping

文件：55.11 Kbytes 页数：3 Pages

Panasonic

松下

Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification, Complementary to 2SB1417 and 2SB1417A Features 1. High forward current transfer ratio hFEwhich has satisfactory linearity 2. Low collector to emitter saturation voltage VCE(sat) 3. Allowing supply with the r

文件：54.7 Kbytes 页数：3 Pages

Panasonic

松下

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage VCEO: 80 V(Min) ·Low Collector Saturation Voltage : VCE(sat) = 1.2V(Max.)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications

文件：323.74 Kbytes 页数：2 Pages

ISC

无锡固电

Plastic-Encapsulated Transistors

文件：57.02 Kbytes 页数：1 Pages

TEL

东电电子

TO-220 -3L Plastic-Encapsulate Transistors

文件：624.53 Kbytes 页数：2 Pages

JIANGSU

长电科技