2SD2114

TRANSISTOR (NPN)

FEATURES •HighDCcurrentgain. •Highemitter-basevoltage. •LowVCE(sat).

2SD2114

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES •HighDCcurrentgain. •Highemitter-basevoltage. •LowVCE(sat).

2SD2114

Marking：BBV；Package：SOT-23；NPN Plastic Encapsulated Transistor

FEATURE •HighDCCurrentGain. •HighEmitter-BaseVoltage.VEBO=12V(Min.)

2SD2114

Marking：BBV；Package：SOT-23；NPN Plastic-Encapsulate Transistor

2SD2114

20V,0.5A,General Purpose NPN Bipolar Transistor;

2SD2114

晶体管;

2SD2114K

High hFE&Muting Transistor; •高hFE•静音用表面安装型三极管;

根据市场需求，提供从超小型到功率型的封装，以节能高可靠性为开发理念的多种产品线。

2SD2114K

High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA)

2SD2114K

Power Transistor

Features HighDCcurrentgain. Highemitter-basevoltage. LowVCE(sat).

2SD2114K

High-current Gain Medium Power Transistor (20V, 0.5A)

Features 1)HighDCcurrentgain.hFE=1200(Typ.) 2)Highemitter-basevoltage.VEBO=12V(Min.) 3)LowVCE(sat).VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) Structure Epitaxialplanartype NPNsilicontransistor