TRANSISTOR (NPN)

FEATURES • High DC current gain. • High emitter-base voltage. • Low VCE (sat).

文件：889.59 Kbytes 页数：3 Pages

HTSEMI

金誉半导体

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • High DC current gain. • High emitter-base voltage. • Low VCE (sat).

文件：919.47 Kbytes 页数：4 Pages

JIANGSU

长电科技

丝印：BBV；Package：SOT-23；NPN Plastic Encapsulated Transistor

FEATURE • High DC Current Gain. • High Emitter-Base Voltage. VEBO=12V (Min.)

文件：415.52 Kbytes 页数：3 Pages

SECOS

喜可士

丝印：BBV；Package：SOT-23；NPN Plastic-Encapsulate Transistor

文件：256.7 Kbytes 页数：3 Pages

SECOS

喜可士

20V,0.5A,General Purpose NPN Bipolar Transistor

Galaxy

银河微电

晶体管

JSCJ

长晶科技

High-current Gain Medium Power Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

文件：112.63 Kbytes 页数：4 Pages

ROHM

罗姆

Power Transistor

Features High DC current gain. High emitter-base voltage. Low VCE (sat).

文件：36.38 Kbytes 页数：1 Pages

KEXIN

科信电子

High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

文件：132.83 Kbytes 页数：4 Pages

ROHM

罗姆

High-current Gain Medium Power Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE= 1200 (Typ.) 2) High emitter-base voltage. VEBO=12V (Min.) 3) Low VCE (sat). VCE (sat)= 0.18V (Typ.) (IC/ IB= 500mA / 20mA) Structure Epitaxial planar type NPN silicon transistor

文件：96.46 Kbytes 页数：5 Pages

ROHM

罗姆