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2SD1985

Silicon NPN triple diffusion planar type(For power amplification)

For power amplification Complementary to 2SB1393 and 2SB1393A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink with one screw

文件:47.34 Kbytes 页数:2 Pages

PANASONIC

松下

2SD1985

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB1393 /1393A APPLICATIONS ·For power amplification

文件:103.72 Kbytes 页数:4 Pages

ISC

无锡固电

2SD1985

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB1393 /1393A APPLICATIONS ·For power amplification

文件:136.06 Kbytes 页数:4 Pages

SAVANTIC

2SD1985A

Silicon NPN triple diffusion planar type(For power amplification)

For power amplification Complementary to 2SB1393 and 2SB1393A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink with one screw

文件:47.34 Kbytes 页数:2 Pages

PANASONIC

松下

2SD1985A

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB1393 /1393A APPLICATIONS ·For power amplification

文件:103.72 Kbytes 页数:4 Pages

ISC

无锡固电

2SD1985A

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB1393 /1393A APPLICATIONS ·For power amplification

文件:136.06 Kbytes 页数:4 Pages

SAVANTIC

2SD1986

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件:91.07 Kbytes 页数:1 Pages

ROHM

罗姆

2SD1991A

Silicon NPN epitaxial planer type

Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A ■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

文件:49.92 Kbytes 页数:3 Pages

PANASONIC

松下

2SD1991A

丝印:D1991A;Package:TO-92;TO-92 Plastic-Encapsulate Transistors

FEATURES High Foward Current Transfer Ratio hFE Low Collector to Emitter Saturation Voltage VCE(sat). Allowing Supply with the Radial Taping.

文件:1.45583 Mbytes 页数:4 Pages

DGNJDZ

南晶电子

2SD1991A

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Foward Current Transfer Ratio hFE ● Low Collector to Emitter Saturation Voltage VCE(sat). ● Allowing Supply with the Radial Taping.

文件:441.76 Kbytes 页数:3 Pages

JIANGSU

长电科技

晶体管资料

  • 型号:

    2SD1939

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-N+Darl+Di

  • 性质:

    开关管 (S)

  • 封装形式:

    直插封装

  • 极限工作电压:

    150V

  • 最大电流允许值:

    1.5A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    2SD1319,2SD1579,2SD1659,2SD1854,2SD2213,

  • 最大耗散功率:

    0.75W

  • 放大倍数:

    β>2000

  • 图片代号:

    A-20

  • vtest:

    150

  • htest:

    999900

  • atest:

    1.5

  • wtest:

    0.75

技术参数

  • hFE min.:

    2000

  • hFE max.:

    30000

  • Pc (W):

    750

  • Package Type:

    TO-92

  • Production Status:

    EOL

供应商型号品牌批号封装库存备注价格
ROHM
24+
60000
询价
RENESAS/瑞萨
23+
TO-92
50000
全新原装正品现货,支持订货
询价
UTG
23+
TO-92L
17999998
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
RENESAS/瑞萨
24+
TO-92
60000
全新原装现货
询价
RENESAS/瑞萨
22+
TO-92
20000
只做原装
询价
RENESAS
19+
TO-92
3015
询价
ST
23+
CAN to-39
16900
正规渠道,只有原装!
询价
ST
25+
CAN to-39
16900
原装,请咨询
询价
ST
2511
CAN to-39
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
ST
26+
CAN to-39
60000
只有原装 可配单
询价
更多2SD19供应商 更新时间2026-2-3 10:50:00