Silicon NPN triple diffusion planar type Darlington(For low-freauency power amplification)

For power switching Complementary to 2SB1156■ •Low collector-emitter saturation voltage VCE(sat)\n•Large collector current IC\n•Full-pack package which can be installed to the heat sink with one screw;

Panasonic

松下

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO = 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 8A ·Complement to Type 2SB1156 APPLICATIONS ·Designed for power switching applications

文件：254.45 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN epitaxial planar type

For power switching Complementary to 2SB1156 ■Features •Low collector-emitter saturation voltage VCE(sat) •Satisfactory linearity of forward current transfer ratio hFE •Large collector current IC •Full-pack package which can be installed to the heat sink with one screw

文件：93.37 Kbytes 页数：4 Pages

Panasonic

松下

TO-252-2L

ROHM

罗姆

上传：深圳市鼎欣微电子有限公司

SOT89

GTM

勤益投资控股

上传：深圳市粤科源兴科技有限公司