NPN Plastic-Encapsulate Transistors

Features • Low Collector-Emitter Saturation Voltage • Large Collector Current • High Power Dissipation • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Hal

文件：336.42 Kbytes 页数：2 Pages

MCC

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FEATURES • High DC current gain due to Darlington connection • Large current capacity and low VCE(sat) • Large power dissipation TO-126 type power transistor • Complementary transistor: 2SB1149

文件：250.37 Kbytes 页数：6 Pages

RENESAS

瑞萨

NPN SILICON DARLINGTON TRANSISTOR

DESCRIPTION The 2SD1692 is a darlington transistor built-in dumper diode at E-C. It is suitable for use to operate from IC without predriver, such as hammer driver.

文件：145.97 Kbytes 页数：2 Pages

NEC

瑞萨

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS)= 100V(min.) ·DC Current Gain : hFE= 2000(Min.) @ IC= 1.5 A ·Complement to Type 2SB1149 APPLICATIONS ·Designed for general-purpose amplifier applications.

文件：253.85 Kbytes 页数：2 Pages

ISC

无锡固电

NPN SILICON DARLINGTON TRANSISTOR

DESCRIPTION The 2SD1693 is a darlington transistor built-in a zener diode at B-C and a dumper diode at E-C. It is suitable for use to operate from IC without predriver, such as hammer driver.

文件：151.5 Kbytes 页数：2 Pages

NEC

瑞萨

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS

文件：385.19 Kbytes 页数：6 Pages

RENESAS

瑞萨

NPN SILICON POWER TRANSISTOR

DESCRIPTION The 2SD1694 is High HFE and Low VCE(sat) transistor. It is suitable for use to operate from IC without predriver, such as hammer driver.

文件：146.93 Kbytes 页数：2 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the

文件：104.31 Kbytes 页数：4 Pages

NEC

瑞萨

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between

文件：257.01 Kbytes 页数：6 Pages

RENESAS

瑞萨

NPN SILICON TRANSISTOR

DESCRIPTION The 2SD1697 is NPN silicon epitaxial darlington transistor designed for pulse motor, printer driver, solenoid driver. FEATURES ● High DC current gain ● Includes a dumper diode of E-C.

文件：121.96 Kbytes 页数：2 Pages

NEC

瑞萨