EPITAXIAL PLANAR NPN SILICON DARLINGTON TRANSISTOR

Features 1) Darlington connection provides high DC current gain (hFE). 2) Damper diode is incorporated. 3) Built-in resistance across base and emitter.

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TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

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isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) • High DC Current Gain : hFE= 1000(Min) @IC= 1A • Low Collector Saturation Voltage APPLICATIONS • Designed for low frequency power amplifier applications.

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EPITAXIAL PLANAR NPN SILICON DARLINGTON TRANSISTOR

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