2SD1616A

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designedforaudiofrequencypoweramplifierandmedium-speedswitchingapplications.

2SD1616A

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURE Powerdissipation

2SD1616A

NPN Plastic-Encapsulated Transistor

FEATURES •Powerdissipation

2SD1616A

NPN SILICON TRANSISTOR

DESCRIPTION 2SD1616AisNPNsiliconplanartransistordesignedforuseindriverandoutputstagesofAFamplifier,generalpurposeapplication.

2SD1616A

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR（NPN） FEATURES ●Lowcollectorsaturationvoltage ●Highbreakdownvoltage ●Hightotalpowerdissipation

2SD1616A

TRANSISTOR (NPN)

FEATURE Powerdissipation PCM:0.75W(Tamb=25℃) Collectorcurrent ICM:1A Collector-basevoltage V(BR)CBO:120V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SD1616A

TRANSISTOR (NPN)

TRANSISTOR(NPN) FEATURE Powerdissipation

2SD1616A

SILICON TRANSISTORS

NPNSILICONEPITAXIALTRANSISTOR FORLOW-FREQUENCYPOWERAMPLIFIERSANDMID-SPEEDSWITCHING FEATURES •LowVCE(sat): VCE(sat)=0.15VTYP.(IC=1.0A,IB=50mA) •LargePTinsmalldimensionwithversatility PT=0.75W,VCEO=50/60V,IC(DC)=1.0A •Complementarytransistorwitht

2SD1616A

Marking：1616A；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Lowcollectorsaturationvoltage Highbreakdownvoltage Hightotalpowerdissipation

2SD1616A

Marking：D1616A；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURE Powerdissipation