TRANSISTOR(NPN)

RM TECHNOLOGY

瑞美科

Bipolar Transistor

UTC

友顺

晶体管

JSCJ

长晶科技

SILICON TRANSISTORS

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A • Complementary transistor with t

文件：235.8 Kbytes 页数：6 Pages

RENESAS

瑞萨

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR（NPN） FEATURES ● Low collector saturation voltage ● High break down voltage ● High total power dissipation

文件：1.047099 Mbytes 页数：3 Pages

JIANGSU

长电科技

NPN SILICON TRANSISTOR

DESCRIPTION 2SD1616A is NPN silicon planar transistor designed for use in driver and output stages of AF amplifier, general purpose application.

文件：111.43 Kbytes 页数：1 Pages

MICRO-ELECTRONICS

丝印：1616A；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low collector saturation voltage High break down voltage High total power dissipation

文件：1.93904 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：D1616A；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEA TURE Power dissipation

文件：1.75193 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：148.22 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURE Power dissipation

文件：294.41 Kbytes 页数：2 Pages

KOOCHIN

灏展电子