isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 4A ·Complement to Type 2SB992 ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio

文件：207.33 Kbytes 页数：3 Pages

ISC

无锡固电

SILICON NPN TRIPLE DIFFUSED TYPE

FEATURES . High Collector Current : Ic=7A . Low Saturation Voltage : VcE(sat)=0. 5V(Max. ) (at Ic=4A) . High Collector Power Dissipation : Pc=40W (at Tc=25°C) . Complementary to 2SB992

文件：130.139 Kbytes 页数：3 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

文件：274.86 Kbytes 页数：2 Pages

ISC

无锡固电

TO-220F

松下

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SOP

RENESAS

瑞萨

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