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2SD1127

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ·Collector-EmitterSustainingVoltage:VCEO(SUS)=120V(Min) ·HighDCCurrentGain:hFE=1000(Min)@IC=10A ·LowSaturationVoltage APPLICATIONS ·Designedforpowerswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SD1127

SILICONNPNTRIPLEDIFFUSEDPOWERSWITCHING

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HitachiHitachi Semiconductor

日立日立公司

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