丝印：2SCR587D3；Package：TO-252-2L；TO-252-2L Plastic-Encapsulate Transistors

=1A/100mA) =120mV(Max.). 2) Complementary PNP Types : 2SAR587D3. Features 1) Suitable for Power Driver. 3) Low VCE(sat) VCE(sat) (IC/IB Application LOW FREQUENCY AMPLIFIER

文件：2.36232 Mbytes 页数：7 Pages

DGNJDZ

南晶电子

丝印：2SCR587D3；Package：TO-252；NPN 3A 120V Power Transistor

文件：1.14343 Mbytes 页数：11 Pages

ROHM

罗姆

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.2V(Max.)@ IC= 1A ·Complement to Type 2SCR587D3 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low freque

文件：318.94 Kbytes 页数：2 Pages

ISC

无锡固电

NPN 3A 120V 功率晶体管

低VCE(sat)功率晶体管。适合低频放大用途。 • Suitable for Power Driver.\n• Complementary PNP Types : 2SAR587D3\n• Low VCE(sat): VCE(sat)=120mV(Max.). (IC/IB=1A/100mA);

ROHM

罗姆

NPN, TO-252 (DPAK), 120V 3A, Power Transistor for Automotive

2SCR587D3FRA is a power transistor with Low VCE(sat), suitable for low frequency amplifier. It is a highly reliable product for automotive. • Suitable for Power Driver.\n• Low VCE(sat)\nVCE(sat)=120mV(Max.) (IC/IB=1A/100mA);

ROHM

罗姆

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 120V 3A TO252

ROHM

罗姆