零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
Silicon Epitaxial Planar Transistor FEATURES ●Highvoltageandhighcurrent. ●ExcellenthFElinearity. ●Lownoise. APPLICATIONS ●Audiofrequencyamplifier. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR(NPN) Features ●ExcellenthFELinearity ●Lownoise | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 | HDSEMI | ||
SILICON EPITAXIAL PLANAR TRANSISTOR Features •Highvoltageandhighcurrent. •ExcellenthFElinearity. •Lownoise. | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE | ||
Plastic-Encapsulate Transistors FEATURES •ComplementarytoA733 | MAKOSEMI MAKO SEMICONDUCTOR CO.,LIMITED | MAKOSEMI | ||
NPN Transistors Features ●Collectorcurrentupto150mA ●HighhFElinearity ●Complementaryto2SA733 | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
TO-92 Plastic-Encapsulate Transistors Complementaryto FEATURE ExcellenthFElinearity Lownoise 2SA733 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
NPN SILICON TRANSISTOR NPNSILICONTRANSISTOR DESCRIPTION The2SC945AisdesignedforuseindriverstageofAFamplifierand lowspeedswitching. FEATURES •Highvoltage LVCEO=50VMIN. •ExcellenthFElinearity hFE1=(0.1mA)/hFE2(1.0mA)=0.92TYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN Silicon Plastic-Encapsulate Transistor Features •Capableof0.4WattsofPowerDissipation. •Collector-current0.15A •Collector-baseVoltage60V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •LeadFreeFinish/RohsCompliant(PSuffi | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
NPN Transistors Features ●Collectorcurrentupto150mA ●HighhFElinearity ●Complementaryto2SA733 | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
NPN Silicon Transistor(AF amplifier and low speed switching) DESCRIPTION The2SC945isdesignedforuseindriverstageofAFamplifierandlowspeedswitching. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
NPN Transistors Features ●Collectorcurrentupto150mA ●HighhFElinearity ●Complementaryto2SA733 | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
NPN EPITAXIAL SILICON TRANSISTOR NPNEPITAXIALSILICONTRANSISTOR *CollectorCurrent:Ic=150mA *Collector-EmitterVoltage:Vce=50V *HighTotalPowerDissipation:Pc=225mW *HighHfeAndGoodLinearity | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
Silicon NPN transistor in a SOT-23 Plastic Package Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Highvoltage,excellenthFElinearity. Applications Generalpoweramplifierapplicationandlowspeedswitching. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
NPN Silicon Transistor(AF amplifier and low speed switching) DESCRIPTION The2SC945isdesignedforuseindriverstageofAFamplifierandlowspeedswitching. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
NPN Silicon Transistor(AF amplifier and low speed switching) DESCRIPTION The2SC945isdesignedforuseindriverstageofAFamplifierandlowspeedswitching. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
NPN Silicon Transistor(AF amplifier and low speed switching) DESCRIPTION The2SC945isdesignedforuseindriverstageofAFamplifierandlowspeedswitching. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
NPN Silicon Plastic-Encapsulate Transistor Features •Capableof0.4WattsofPowerDissipation. •Collector-current0.15A •Collector-baseVoltage60V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •LeadFreeFinish/RohsCompliant(PSuffi | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
Si NPN Planar
| ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
Si NPN Planar
| ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
Silicon NPN Power Transistors | SAVANTIC Savantic, Inc. | SAVANTIC |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-NPN
- 性质:
电视 (TV)_行输出 (HA)
- 封装形式:
直插封装
- 极限工作电压:
200V
- 最大电流允许值:
9A
- 最大工作频率:
20MHZ
- 引脚数:
2
- 可代换的型号:
BU106,BU109,BU124(A),
- 最大耗散功率:
50W
- 放大倍数:
- 图片代号:
E-44
- vtest:
200
- htest:
20000000
- atest:
9
- wtest:
50
详细参数
- 型号:
2SC94
- 制造商:
Panasonic Industrial Company
- 功能描述:
DISCD TRANSISTOR
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TO-3 |
10000 |
询价 | |||||
ISC |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
23+ |
TO |
20000 |
正品原装货价格低qq:2987726803 |
询价 | |||
SED/NEC |
22+ |
TO-3 |
12000 |
只做原装、原厂优势渠道、假一赔十 |
询价 | ||
SED/NEC |
23+ |
TO-3 |
6000 |
只有原装正品,老板发话合适就出 |
询价 | ||
NEC |
2023+ |
铁帽 |
50000 |
原装现货 |
询价 | ||
SED/NEC |
24+ |
TO-3 |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
TOSHIBA |
TO-92 |
608900 |
原包原标签100%进口原装常备现货! |
询价 | |||
TOSHIBA/东芝 |
23+ |
TO-92 |
90000 |
原装原盘 |
询价 | ||
KEC |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 |