2SD108

Silicon NPN Darlingtion Power Transistor

DESCRIPTION •HighDCcurrentgain-:hFE=2000(Min)@IC=1A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=80V(Min) •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Powerswitching •Hammerdrivers •Seriesandshuntregulator •

2SD1087

HIGH CURRENT SWITCHING APPLICATIONS.

FEATURES -HighDCCurrentGain :hFE-1000(Min.)(VCE-3V,IC-15A) -LowCollectorSaturationVoltage :VCE(sat)=1.5V(Max.)(IC-15A) -MonolithicConstructionwithBuilt-In Base-EmitterShuntResistor,

2SD1088

POWER TRANSISTORS(6A,250V,30W)

HIGHVOLTAGEDARLINGTONPOWERTRANSISTORS 6AMPEREPOWERDARLINGTONTRANSISTORS250VOLTS30WATTS

2SD1088

SILICON NPN TRIPLE DIFFUSED TRANSISTOR(GENERAL DESCRIPTION)

GENERALDESCRIPTION Highvoltageswitchingapplication. Igniterapplication.

2SD1088

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-220package ·HighDCcurrentgain ·DARLINGTON APPLICATIONS ·Forswitchingigniterapplications

2SD1088

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-220package ·HighDCcurrentgain ·DARLINGTON APPLICATIONS ·Forswitchingigniterapplications

2SD1088

High Voltage Darlington Power Transistor

HighVoltageDarlingtonPowerTransistor NPNType5Amps,250Voltage,30watts

2SD1083

SILICON NPN EPITAXIAL PLANAR POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT

2SD1088

Silicon NPN Power Transistors