Silicon NPN epitaxial planer type(For low-frequency power amplification)

■ Features ● High collector to emitter voltage VCEO. ● Large collector power dissipation PC. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

文件：40.33 Kbytes 页数：2 Pages

PANASONIC

松下

Medium Power Transistor (32V, 2A)

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

文件：124.57 Kbytes 页数：4 Pages

ROHM

罗姆

SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)

文件：113.36 Kbytes 页数：3 Pages

TOSHIBA

东芝

Medium Power Transistor (32V, 2A)

1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A)\n2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M\nStructure\n   Epitaxial planar type\n   NPN silicon transistor;

ROHM

罗姆

Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

Panasonic

松下

SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)

Toshiba

东芝