NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE width. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drive

文件：37.24 Kbytes 页数：4 Pages

SANYO

三洋

DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE width. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, f

文件：53.64 Kbytes 页数：4 Pages

SANYO

三洋

For power amplification For TV VM circuit

Silicon NPN epitaxial planar type For power amplification For TV VM circuit ■ Features • Satisfactory linearity of forward current transfer ratio hFE • High transition frequency (fT) • Full-pack package which can be installed to the heat sink with one screw.

文件：73.11 Kbytes 页数：3 Pages

PANASONIC

松下

isc Silicon NPN Power Transistor

DESCRIPTION • Good Linearity of hFE • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) • Complement to Type 2SA2140 APPLICATIONS • Power amplification • For TV VM circuit

文件：247.78 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Good Linearity of hFE • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) • Complement to Type 2SA2140 APPLICATIONS • Power amplification • For TV VM circuit

文件：125.27 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment.

文件：36.13 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single PCP

Features • Adoption of MBIT Process • Low Collector to Emitter Saturation Voltage • Large Current Capacity • High Speed Switching Typical Applications • Voltage Regulators • Relay Drivers • Lamp Drivers • Electrical Equipment

文件：327.99 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Bipolar Transistor

Features • Adoption of MBIT Process • Low Collector to Emitter Saturation Voltage • Large Current Capacity • High Speed Switching Typical Applications • Voltage Regulators • Relay Drivers • Lamp Drivers • Electrical Equipment

文件：294.39 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Bipolar Transistor

Features • Adoption of MBIT Process • Low Collector to Emitter Saturation Voltage • Large Current Capacity • High Speed Switching Typical Applications • Voltage Regulators • Relay Drivers • Lamp Drivers • Electrical Equipment

文件：294.39 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single PCP

Features • Adoption of MBIT Process • Low Collector to Emitter Saturation Voltage • Large Current Capacity • High Speed Switching Typical Applications • Voltage Regulators • Relay Drivers • Lamp Drivers • Electrical Equipment

文件：327.99 Kbytes 页数：7 Pages

ONSEMI

安森美半导体