2SC5900

SILICON TRANSISTOR

CRTDisplayHorizontalDeflectionOutputApplications Features •Highspeed. •Highbreakdownvoltage(VCBO=1700V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess. •Builtindamperdiode.

2SC5900

High Switching Speed

DESCRIPTION •HighBreakdownVoltage-:VCBO=1700V(Min) •HighSwitchingSpeed •HighReliability APPLICATIONS •ColorTVhorizontaldeflectionoutputapplications

2SC5902

Silicon NPN triple diffusion mesa type

HorizontaldeflectionoutputforTV *Features •Highbreakdownvoltage:VCBO≥1700V •Widesafeoperationarea •Built-indumperdiode

2SC5902

isc Silicon NPN Power Transistor

DESCRIPTION •HighBreakdownVoltage •Built-indamperdiodetype •HighSwitchingSpeed •WideAreaofSafeOperation •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforhighvoltagecolordisplayhori

2SC5904

Silicon NPN triple diffusion mesa type

ForHorizontaldeflectionoutputforTV,CRTmonitor ■Features •Highbreakdownvoltage(VCBO≥1700V) •High-speedswitching(tf

2SC5905

Silicon NPN triple diffusion mesa type

HorizontaldeflectionoutputforTV,CRTmonitor ■Features •Highbreakdownvoltage:VCBO≥1700V •High-speedswitching:tf

2SC5906

丝印：WP；Package：TSM；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SC5909

Silicon NPN triple diffusion mesa type

Forhorizontaldeflectionoutput ■Features •Highbreakdownvoltage:VCBO≥1500V •High-speedswitching:tf

2SC5901

Power Device - Power Transistors - Television/Display

2SC5902

Silicon NPN triple diffusion mesa type