General Purpose Diodes

General Purpose Diodes

文件：127.97 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Electrical characterlitics

General Purpose Diodes

文件：127.97 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistor

DESCRIPTION ·High switching speed time ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High-Speed Switching Applications ·DC/DC Converter Applications

文件：288.65 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN triple diffusion mesa type

Horizontal deflection output for TV, CRT monitor Features 1. High breakdown voltage: VCBO ≥1 500 V 2. Wide safe operation area 3. Built-in dumper diode

文件：64.75 Kbytes 页数：3 Pages

PANASONIC

松下

丝印：C5886；Package：SC-68；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

High-Speed Swtching Applications

High-Speed Swtching Applications DC-DC Converter Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) • High-speed switching: tf = 55 ns (typ.)

文件：116.29 Kbytes 页数：5 Pages

TOSHIBA

东芝

丝印：C5886A；Package：SC-69；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

High-Speed Switching Applications

High-Speed Switching Applications DC/DC Converter Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) • High-speed switching: tf = 95 ns (typ.)

文件：139.89 Kbytes 页数：5 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION ·High switching speed time ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High-Speed Switching Applications ·DC/DC Converter Applications

文件：290.94 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Speed Switching ·Low Saturation Voltage- : VCE(sat)= 0.4V(Max)@ (IC= 7A; IB= 0.35A) B ·Complement to Type 2SA2098 APPLICATIONS ·Relay drivers, lamp drivers, motor drivers.

文件：243.4 Kbytes 页数：2 Pages

ISC

无锡固电