MEDIUM POWER AMPLIFIER APPLICATIONS

MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS Low Saturation Voltage: VCE (sat) (1) = 0.25 V (max) (IC = 3 A/IB = 60 mA)

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TOSHIBA

东芝

NPN PLANAR SILICON TRANSISTOR

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

文件：50.77 Kbytes 页数：3 Pages

SANYO

三洋

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For DC-DC converter ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

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PANASONIC

松下

SMALL-SIGNAL TRANSISTOR FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC5727 is a super mini package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency application. FEATURE ● High gain bandwidth product. fT=10.0GHz ● High gain, low noise. ● Can operate at low voltage. ● Super mini package for easy mounting APPLI

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ISAHAYA

谏早电子

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC5728 is a ultra super mini package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency application. FEATURE ● High gain bandwidth product. fT=10.0GHz ● High gain, low noise. ● Can operate at low voltage. ● Super mini package for e

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ISAHAYA

谏早电子

MEDIUM POWER TRANSISTOR (-30V,-0.5A)

Features 1) High speed switching. (Tf : Typ. : 40ns at IC = −500mA) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −100A, IB = −100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5729 Applications Small signal low frequency amplif

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ROHM

罗姆

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

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ISAHAYA

谏早电子

Medium power transistor (30V, 0.5A)

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ROHM

罗姆

Horizontal Deflection Switching Transistors

ONSEMI

安森美半导体

Horizontal Deflection Switching Transistors

ONSEMI

安森美半导体