2SC5720

MEDIUM POWER AMPLIFIER APPLICATIONS

MEDIUMPOWERAMPLIFIERAPPLICATIONS STOROBOFLASHAPPLICATIONS LowSaturationVoltage:VCE(sat)(1)=0.25V(max)(IC=3A/IB=60mA)

2SC5722

NPN PLANAR SILICON TRANSISTOR

Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features •Highspeed. •Highbreakdownvoltage(VCBO=1500V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess.

2SC5725

Silicon NPN epitaxial planar type

SiliconNPNepitaxialplanartype ForDC-DCconverter ■Features •Lowcollector-emittersaturationvoltageVCE(sat) •Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepacking

2SC5727

SMALL-SIGNAL TRANSISTOR FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC5727isasuperminipackageresinsealedsiliconNPNepitaxialtransistor. Itisdesignedforhighfrequencyapplication. FEATURE ●Highgainbandwidthproduct. fT=10.0GHz ●Highgain,lownoise. ●Canoperateatlowvoltage. ●Superminipackageforeasymounting APPLI

2SC5728

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC5728isaultrasuperminipackageresinsealedsiliconNPNepitaxialtransistor. Itisdesignedforhighfrequencyapplication. FEATURE ●Highgainbandwidthproduct. fT=10.0GHz ●Highgain,lownoise. ●Canoperateatlowvoltage. ●Superminipackagefore

2SC5729

MEDIUM POWER TRANSISTOR (-30V,-0.5A)

Features 1)Highspeedswitching.(Tf:Typ.:40nsatIC=−500mA) 2)Lowsaturationvoltage,typically(Typ.:−150mVatIC=−100A,IB=−100mA) 3)Strongdischargepowerforinductiveloadandcapacitanceload. 4)Complementsthe2SC5729 Applications Smallsignallowfrequencyamplif

2SC5726

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

2SC5729

Medium power transistor (30V, 0.5A)

2SC57250SL

包装：散装 封装/外壳：TO-236-3，SC-59，SOT-23-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 15V 2A MINI3

2SC5729T106Q

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：SC-70，SOT-323 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 30V 0.5A UMT3

2SC5729T106R

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：SC-70，SOT-323 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 30V 0.5A UMT3