NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR LOW NOISE × HIGH-GAIN AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for low noise × high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA • Maximum available powe

文件：262.57 Kbytes 页数：22 Pages

RENESAS

瑞萨

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise × high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 12.5 dB TYP. @ VCE = 2 V, IC = 20 mA,

文件：266.17 Kbytes 页数：18 Pages

RENESAS

瑞萨

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR LOW NOISE × HIGH-GAIN AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for low noise × high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA • Maximum available powe

文件：262.57 Kbytes 页数：22 Pages

RENESAS

瑞萨

230V / 15A, AF100W Output Applications

230V / 15A, AF100W Output Applications Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process.

文件：33.21 Kbytes 页数：4 Pages

SANYO

三洋

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz)

文件：193.18 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：T2L；Package：VMT3；High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz)

文件：193.18 Kbytes 页数：4 Pages

ROHM

罗姆

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz)

文件：193.18 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：AD；Package：VMT3；High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)

文件：74.61 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：T2L；Package：VMT3；High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)

文件：153.34 Kbytes 页数：3 Pages

ROHM

罗姆

SOT-723 Plastic-Encapsulate Transistors

文件：649.68 Kbytes 页数：4 Pages

JIANGSU

长电科技