2SC5668中文资料瑞萨数据手册PDF规格书

NPN SILICON RF TRANSISTOR FOR

LOW NOISE × HIGH-GAIN AMPLIFICATION

FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES

• Ideal for low noise × high-gain amplification and oscillation at 3 GHz or over

NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA

• Maximum available power gain: MAG. = 12.5 dB TYP. @ f = 2 GHz, VCE = 2 V, IC = 20 mA

• High fT: fT = 21 GHz TYP. @ f = 2 GHz, VCE = 2 V, IC = 20 mA

• fT = 25 GHz “UHS0” (Ultra High Speed Process) technology adopted

• Flat-lead 3-pin thin-type ultra super minimold (t = 0.59 mm)