High-Frequency Amplifier Transistor (18V, 50mA, 1.5GHz)

Features 1) High transition frequency. (Typ. fT = 1.5GHz) 2) Small rbb’⋅Ccand high gain. (Typ. 6ps) 3) Small NF.

文件：75.61 Kbytes 页数：4 Pages

ROHM

罗姆

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz)

Features 1) High transition frequency. (Typ. fT = 1.5GHz) 2) Small rbb’⋅Ccand high gain. (Typ. 6ps) 3) Small NF.

文件：128.82 Kbytes 页数：5 Pages

ROHM

罗姆

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz)

Features 1) High transition frequency. (Typ. fT = 1.5GHz) 2) Small rbb’⋅Ccand high gain. (Typ. 6ps) 3) Small NF.

文件：128.82 Kbytes 页数：5 Pages

ROHM

罗姆

丝印：AD；Package：EMT3；High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)

Features 1) High transition frequency. (Typ. fT= 1.5GHz) 2) Small rbbí⋅Cc and high gain. (Typ. 4ps) 3) Small NF.

文件：98.69 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：AD；Package：VMT3；High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)

Features 1) High transition frequency. (Typ. fT= 1.5GHz) 2) Small rbbí⋅Cc and high gain. (Typ. 4ps) 3) Small NF.

文件：64.04 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：BX；Package：VMT3；Low frequency transistor (12V, 0.5A)

The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Features 1) High current. 2) Low VCE(sat). VCE(sat) ≤ 250mV at IC = 200mA / IB = 10mA Applications For switching For muting

文件：69.74 Kbytes 页数：3 Pages

ROHM

罗姆

Low Ferquency NPN Transistor

VOLTAGE 12 Volts CURRENT 0.5 Ampere FEATURE * Small surface mounting type. (SC-75/SOT-416) * High current * Collector saturation voltage is low. VCE(sat)

文件：573.32 Kbytes 页数：3 Pages

CHENMKO

力勤

High-Frequency Low-Noise Amplifier and OSC Applications

High-Frequency Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.5dB typ (f=2GHz). • High cut-off frequency : fT=6.5GHz typ (VCE=1V). : fT=11.2GHz typ (VCE=3V). • Low operating voltage.

文件：36.39 Kbytes 页数：7 Pages

SANYO

三洋

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR LOW NOISE × HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Ideal for low noise × high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA • Maximum available power gain: MAG. = 12.5

文件：262.64 Kbytes 页数：22 Pages

RENESAS

瑞萨

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR LOW NOISE × HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Ideal for low noise × high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA • Maximum available power gain: MAG. = 12.5

文件：262.64 Kbytes 页数：22 Pages

RENESAS

瑞萨