UHF to S Band Low-Noise Amplifier and OSC Applications

UHF to S Band Low-Noise Amplifier and OSC Applications Features • Low noise : NF=1.5dB typ (f=2GHz). • High cutoff frequency : fT=10GHz typ (VCE=1V). : fT=12.5GHz typ (VCE=3V). • Low-voltage operating . • High gain :|S21e|2 =9.5dB typ (f=2GHz).

文件：32.75 Kbytes 页数：6 Pages

SANYO

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UHF to S Band Low-Noise Amplifier andOSC Applications

UHF to S Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.5dB typ (f=2GHz). • High cut-off frequency : fT=10GHz typ (VCE=1V). : fT=12.5GHz typ (VCE=3V). • Low operating voltage. • High gain :S21e2=9.5dB typ (f=2GHz

文件：31.71 Kbytes 页数：6 Pages

SANYO

三洋

UHF to S-Band Low-Noise Amplifier, OSC Applications

UHF to S-Band Low-Noise Amplifier, OSC Applications Features • Low-noise : NF=1.5dB typ (f=2GHz) • High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V) • Low-voltage operation • High gain : ⏐S21e⏐2=9.5dB typ (f=2GHz) • Ultrasmall, sl

文件：61.1 Kbytes 页数：7 Pages

SANYO

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RF Transistor 4V, 30mA, fT=12.5GHz, NPN Single SSFP

Features • Low-noise : NF=1.5dB typ (f=2GHz) • High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V) • Low-voltage operation • High gain : ⏐S21e⏐2=9.5dB typ (f=2GHz) • Ultrasmall, slim flat-lead package (1.4mm×0.8mm×0.6mm) • Halogen f

文件：437.71 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

RF Transistor 4V, 30mA, fT=12.5GHz, NPN Single SSFP

Features • Low-noise : NF=1.5dB typ (f=2GHz) • High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V) • Low-voltage operation • High gain : ⏐S21e⏐2=9.5dB typ (f=2GHz) • Ultrasmall, slim flat-lead package (1.4mm×0.8mm×0.6mm) • Halogen f

文件：437.71 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

UHF to S Band Low-Noise Amplifier and OSC Applications

UHF to S Band Low-Noise Amplifier and OSC Applications Features • Low noise : NF=2.6dB typ (f=2GHz). • High cutoff frequency : fT=9.0GHz typ (VCE=1V). : fT=11.5GHz typ (VCE=3V). • Low operating voltage. • High gain : S21e2=10.5dB typ (f=2GHz).

文件：36.47 Kbytes 页数：7 Pages

SANYO

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NPN EPITAXIAL PLANAR SILICON TRANSISTOR

UHF to S Band Low-Noise Amplifier and OSC Applications Features • Low noise : NF=2.6dB typ (f=2GHz). • High cutoff frequency : fT=9.0GHz typ (VCE=1V). : fT=11.5GHz typ (VCE=3V). • Low operating voltage. • High gain : S21e2=10.5dB typ (f=2GHz). • Ultram

文件：51.23 Kbytes 页数：6 Pages

SANYO

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UHF to S-Band Low-Noise Amplifier, OSC Applications

文件：444.77 Kbytes 页数：9 Pages

SANYO

三洋

UHF to S-Band Low-Noise Amplifier, OSC Applications

文件：444.77 Kbytes 页数：9 Pages

SANYO

三洋

射频晶体管，NPN 单，4 V，30 mA，fT = 12.5 GHz

2SC5646A is RF Transistor, 4 V, 30 mA, fT = 12.5 GHz, NPN Single SSFP for UHF to S-Band Low-Noise Amplifier OSC Applications. • Low-noise : NF=1.5dB typ (f=2GHz)\n• High cut-off frequency : fT=10GHz typ (VCE=1V), fT=12.5GHz typ (VCE=3V)\n• Low-voltage operation\n• High gain : Forward Transfer Gain =9.5dB typ (f=2GHz)\n• Ultrasmall, slim fl at-lead package (1.4mm x 0.8mm x 0.6mm)\n• Halogen free compliance;

ONSEMI

安森美半导体