Si NPN Epitaxial Planar

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ETCList of Unclassifed Manufacturers

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Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier

Features • High gain bandwidth product fT = 11 GHz typ. • High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz

文件：118.05 Kbytes 页数：10 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier

Features • High gain bandwidth product fT = 11 GHz typ. • High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz

文件：75.73 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For high-frequency amplification and switching ■ Features • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

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PANASONIC

松下

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC5633 is a super mini package resin sealed silicon NPN epitaxial transistor, It is designed for high voltage application. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.5V max ● Super mini package for easy mounting APPLICATION For Hybrid IC, DC-DC conv

文件：49.79 Kbytes 页数：2 Pages

ISAHAYA

谏早电子

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION Mitsubishi 2SC5634 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application. FEATURE • High gain bandwidth product. fT=8.0GHz • High gain,low noise. • Can operate at low voltage. • Super mini package for easy mounting. A

文件：95.15 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION Mitsubishi 2SC5635 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application. FEATURE ▪ Super mini package for easy mounting. ▪ High gain bandwidth product. fT=8.0GHz ▪ High gain,low noise. ▪ Can operate at low voltage

文件：95.58 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION Mitsubishi 2SC5636 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application. FEATURE • High gain bandwidth product. fT=8.0GHz • High gain,low noise. • Can operate at low voltage. • Super mini package for easy mounting. A

文件：88.22 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed (tf=100ns typ). • High breakdown voltage (VCBO=1500V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

文件：57.05 Kbytes 页数：4 Pages

SANYO

三洋

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed (tf=100ns typ). • High breakdown voltage (VCBO=1500V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

文件：44.73 Kbytes 页数：4 Pages

SANYO

三洋