Silicon NPN Epitaxial High Frequency Low Noise Amplifier

Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz

文件：89.89 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial High Frequency Low Noise Amplifier

Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz

文件：89.89 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial High Frequency Low Noise Amplifier

Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz

文件：53.39 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

SOT343

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

TO-92

ROHM

罗姆

上传：深圳市鸿昌盛电子科技有限公司