SILICON NPN TRIPLE DIFFUSED CHARACTER DISPLAY HORIZONTAL DEFLECTION OUTPUT

Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec(typ.) at fH=64kHz

文件：42.3 Kbytes 页数：7 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)

For low-voltage low-noise high-frequency oscillation ■Features •High transition frequency fT •High gain of 8.2 dB and low noise of 1.8 dB at 3 V •Optimum for RF amplification of a portable telephone and pager •S-mini type package, allowing downsizing of the equipment and automatic

文件：52.61 Kbytes 页数：2 Pages

Panasonic

松下

Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)

For low-voltage low-noise high-frequency oscillation ■ Features ● High transition frequency fT. ● High gain of 8.9dB and low noise of 1.8dB at 3V. ● Optimum for RF amplification of a portable telephone and pager. ● S-Mini type package, allowing downsizing of the equipment and auto

文件：34.47 Kbytes 页数：2 Pages

Panasonic

松下

Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)

For low-voltage low-noise high-frequency oscillation ■ Features ● High transition frequency fT. ● High gain of 8.9dB and low noise of 1.8dB at 3V. ● Optimum for RF amplification of a portable telephone and pager. ● SS-Mini type package, allowing downsizing of the equipment and aut

文件：34.29 Kbytes 页数：2 Pages

Panasonic

松下

NPN SILICON PLANAR SILICON DARINGTON TRANSISTOR

85V/3A Driver Applications Applications · Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers). Features · High DC current gain. · Large current capacity and wide ASO. · Contains a Zener diode of 95±10V between collector and base.

文件：348.03 Kbytes 页数：3 Pages

SANYO

三洋

TRANSISTOR

FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO

文件：117.16 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

■Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)

文件：35.17 Kbytes 页数：2 Pages

Panasonic

松下

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage-: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for horizontal deflection output stage applications.

文件：244.64 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Triple Diffused Horizntal Deflection Output

Features • High breakdown voltage VCES = 1500 V • Isolated package TO–3PFM • Built-in damper diode

文件：33.4 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO

[Isahaya] For Low Frequency Power Amplify Application DESCRIPTION 2SC5482 is a silicon NPN epitaxial designed for relay drive or power supply application.

文件：105.9 Kbytes 页数：4 Pages

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