Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 13(Min)@ IC= 1mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.

文件：301.14 Kbytes 页数：2 Pages

ISC

无锡固电

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

NPN TRIPLE DIFFUSED TYPE (DYNAMIC FOCUS, HIGH VOLTAGE SWITCHING, AMPLIFIER APPLICATIONS)

Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications • High breakdown voltage: VCEO = 800 V

文件：164.8 Kbytes 页数：3 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • NF=1.1dB, |S21e|2=12dB (f=1GHz)

文件：136.46 Kbytes 页数：3 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Low Noise Figure

DESCRIPTION • Low Noise Figure NF = 1.1 dB TYP. @VCE = 8 V, IC = 5 mA, f = 1 GHz • High Gain ︱ S21e︱ 2 = 12 dB TYP. @VCE = 8 V, IC = 15 mA, f = 1 GHz APPLICATIONS • Designed for use in VHF~ UHF band low noise amplifier.

文件：144.41 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN RF Transistor

DESCRIPTION • Low Noise Figure NF = 1.1 dB TYP. @VCE = 8 V, IC = 5 mA, f = 1 GHz • High Gain ︱ S21e︱ 2 = 12 dB TYP. @VCE = 8 V, IC = 15 mA, f = 1 GHz APPLICATIONS • Designed for use in VHF~ UHF band low noise amplifier.

文件：122.98 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)

文件：91.12 Kbytes 页数：2 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)

文件：91.88 Kbytes 页数：2 Pages

TOSHIBA

东芝