NPN TRIPLE DIFFUSED TYPE (POWERAMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO= 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage.

文件：150.49 Kbytes 页数：2 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1987 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage

文件：142.4 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION · With TO-3PL package ·Complement to type 2SA1987 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage

文件：243.29 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Power Transistors

文件：244.95 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Power Transistor

文件：127.45 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power Amplifier Applications

文件：128.83 Kbytes 页数：4 Pages

TOSHIBA

东芝

Power Amplifier Applications

文件：127.69 Kbytes 页数：4 Pages

TOSHIBA

东芝

Power transistor for high-speed switching applications

Application Scope：Audio amplifier output stage 120-W\nPolarity：NPN\nComplementary Product：2SA1987\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 15 A \nCollector power dissipation PC 180 W \nCollector-emitter voltage VCEO 230 V ;

Toshiba

东芝

NPN epitaxial silicon transistor\n

MOT

仁懋