TRANSISTOR (NPN)

[WEJ ELECTRONIC CO.] FEATURES Power dissipation PCM: 400 mW (Tamb=25℃) Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

文件：107.16 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

丝印：C536；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Amplifier Transistor

文件：1.44216 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 400 mW (Tamb=25℃) Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：126.16 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Large current capacity and wide ASO Applications Small signal general purpose amplifier applications.

文件：1.33157 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

NPN TRIPLE DIFFUSED TYPE (COLOR TV CHROM OUTPUT APPLICATIONS)

Transistor Silicon NPN Triple Diffused Type Color TV Chroma Output Applications • High voltage: VCEO= 300 V • Small collector output capacitance: Cob= 5.0 pF (typ.) • High transition frequency: fT= 100 MHz (typ.)

文件：85.53 Kbytes 页数：1 Pages

TOSHIBA

东芝

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)

High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • Excellent switching times: tf= 0.5 µs (max) (IC= 1.2 A) • High breakdown voltage: VCEO= 800 V • High DC current gain: hFE= 15 (min) (IC= 0.15 A)

文件：171.89 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon NPN epitaxial planer type(For low-voltage high-frequency amplification)

For low-voltage high-frequency amplification ■Features ● High transition frequency fT. ● Small collector output capacitance Cob. ● SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.

文件：37.04 Kbytes 页数：2 Pages

PANASONIC

松下

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)

High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High speed: tr= 0.5 μs (max), tf= 0.3 μs (max) (IC= 0.8 A) • High breakdown voltage: VCEO= 450 V • High DC current gain: hFE= 20 (min) (IC= 0.2 A)

文件：167.35 Kbytes 页数：3 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION

FEATURES • High fT 14 GHz TYP. • High gain | S21e |2 = 14 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 10 mA • NF = 1.3 dB, @f = 2 GHz, VCE= 3 V, IC = 3 mA • 6-pin small mini mold package

文件：72.02 Kbytes 页数：12 Pages

NEC

瑞萨