NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitrid

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NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitr

文件：236.59 Kbytes 页数：12 Pages

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NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION\nThe 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride • Low Voltage Use.\n• High fT : 7.0 GHz TYP. (@ VCE= 3 V, IC= 7 mA, f = 1 GHz)\n• Low Cre : 0.45 pF TYP. (@ VCE= 3 V, IE= 0, f = 1 MHz)\n• Low NF : 1.4 dB TYP. (@ VCE= 3 V, IC= 7 mA, f = 1 GHz)\n• High |S21e|2: 12 dB TYP. (@ VCE= 3 V, IC= 7 mA, f = 1 GHz)\n• Ultra Super Mini Mold Package.;

Renesas

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NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitr

文件：236.59 Kbytes 页数：12 Pages

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION\nThe 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride • Low Voltage Use.\n• High fT : 7.0 GHz TYP. (@ VCE= 3 V, IC= 7 mA, f = 1 GHz)\n• Low Cre : 0.45 pF TYP. (@ VCE= 3 V, IE= 0, f = 1 MHz)\n• Low NF : 1.4 dB TYP. (@ VCE= 3 V, IC= 7 mA, f = 1 GHz)\n• High |S21e|2: 12 dB TYP. (@ VCE= 3 V, IC= 7 mA, f = 1 GHz)\n• Ultra Super Mini Mold Package.;

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Package：SOT-523；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 10V 7GHZ SOT523

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