Switching Power Transistor(10A NPN)

Switching Power Transistor HSV Series 10A NPN

文件：401.36 Kbytes 页数：8 Pages

SHINDENGEN

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage

文件：153.67 Kbytes 页数：3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage

文件：223.91 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEo(sus)= SOV(Min) • Collector Current-Ic= 10A(Max.) • Low Collector Saturation Voltage : VCE(sat) = 0.3V(Max.)@ Ic= 5A APPLICATIONS • Designed for use in drivers such as DC/DCconverters and actuators.

文件：131.27 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Low-Frequency General-Purpose Amp Applications?

Low-Frequency General-Purpose Amplifier Applications Features • AF power amplifier, medium-speed switching, small sized motor drivers and LED drivers. • Large current capacity. • Low collector-to-emitter saturation voltage. • Very small-sized pakage permitting 2SA1881/2SC4983-appi

文件：123.57 Kbytes 页数：4 Pages

SANYO

三洋

Low-Frequency General-Purpose Amp Applications?

Low-Frequency General-Purpose Amplifier Applications Features • Large current capacity. • Low collector-to-emitter saturation voltage. Applcations • Low-frequency power amplifier applications. • Medium-speed switching. • Small-sized motor drivers.

文件：124.32 Kbytes 页数：4 Pages

SANYO

三洋

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

■ Features ● High collector to base voltage VCBO ● High collector to emitter VCEO ● Allowing automatic insertion with radial taping

文件：40.11 Kbytes 页数：2 Pages

Panasonic

松下

High-Speed Switching Applications

High-Speed Switching Applications Features • Fast switching speed. • Low collector saturation voltage. • High gain-bandwidth product. • Small collector capacitance. • Very small-sized package permitting 2SC4987-applied sets to be made small and slim.

文件：90.56 Kbytes 页数：3 Pages

SANYO

三洋

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 8.5 GHz Typ • High gain, low noise figure PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：47.27 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 8.5 GHz Typ • High gain, low noise figure PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：88.87 Kbytes 页数：8 Pages

RENESAS

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