Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 8.5 GHz Typ • High gain, low noise figure PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：47.27 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

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Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 8.5 GHz Typ • High gain, low noise figure PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：88.87 Kbytes 页数：8 Pages

RENESAS

瑞萨

High Gain Bandwidth Product

DESCRIPTION • High Gain Bandwidth Product fT = 8.5 GHz TYP. • High Gain, Low Noise Figure PG = 10.5 dB TYP. , NF = 1.3 dB TYP. @ f = 900 MHz APPLICATIONS • Designed for use in VHF ~ UHF wide band amplifier.

文件：216.78 Kbytes 页数：5 Pages

ISC

无锡固电

Transistor-Small Signal Bip-TRSs for High Frequency Amplifier

Renesas

瑞萨

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 8.5 GHz Typ • High gain, low noise figure PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：88.87 Kbytes 页数：8 Pages

RENESAS

瑞萨