Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE ● Dielectric breakdown voltage o

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PANASONIC

松下

isc Silicon NPN Power Transistor

DESCRIPTION ● Silicon NPN triple diffusion planar type ● High Speed Switching ● 100 avalanche tested ● Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ● Designed for high breakdown voltage high speed switching

文件：277.86 Kbytes 页数：2 Pages

ISC

无锡固电

SILICON TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP.

文件：200.11 Kbytes 页数：9 Pages

RENESAS

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP.

文件：48.37 Kbytes 页数：6 Pages

NEC

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP.

文件：48.37 Kbytes 页数：6 Pages

NEC

瑞萨

SILICON TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP.

文件：200.11 Kbytes 页数：9 Pages

RENESAS

瑞萨

SILICON TRANSISTOR

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP.

文件：200.11 Kbytes 页数：9 Pages

RENESAS

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.3 pF TYP.

文件：48.37 Kbytes 页数：6 Pages

NEC

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.4 pF TYP.

文件：44.79 Kbytes 页数：6 Pages

NEC

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance Cre = 0.4 pF TYP.

文件：44.79 Kbytes 页数：6 Pages

NEC

瑞萨